High-power FET circuit

Details High-power FET circuit High-power FET circuit

1989-02-21

1991-02-12

Gensler, Paul

Wave transmission lines and networks

Long line elements and components

Strip type

357 22, H01P 500

Patent

active

049927647

ABSTRACT:
A power FET includes a substrate of semi-insulating material having a top side and a ground side; an FET fabricated on the ground side of the substrate; and conductor means in the substrate extending from the drain electrode and the gate electrode on the ground side to the top side of the substrate. A ground plane on the ground side of the substrate contacts the source electrode of the FET and is spaced from the gate and drain electrodes to form a dome for minimizing ground inductance and maximizing heat transfer from the FET independent of the thickness of the substrate.

REFERENCES:
patent: 4624004 (1986-11-01), Calviello
patent: 4673958 (1987-06-01), Bayraktaroglu

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