Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Reexamination Certificate
2006-07-18
2006-07-18
Lee, John D. (Department: 2874)
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
C330S053000, C330S12400D, C330S295000, C330S302000
Reexamination Certificate
active
07078976
ABSTRACT:
A high power Doherty amplifier circuit having at least one input terminal and at least one output terminal comprising at least one carrier transistor (30) forming a main amplifier stage; at least one peak transistor (32) forming a peak amplifier stage; a first input line (27) connecting the input terminal (28) to an input (29) of the carrier transistor (30); a second input line (31) connecting the input terminal (28) to an input (63) of the peak transistor (32); a first output line (33) connecting the output terminal (56) to an output (49) of the carrier transistor (30); and a second output line (35) connecting the output terminal (56) to an output (75) of the peak transistor (32). A high power Doherty amplifier circuit package comprising a support structure (104) supporting circuit elements of the Doherty amplifier circuit; at least one input terminal (102) and at least one output terminal (96) both terminals being supported on the support structure (104); at least one carrier transistor (92) forming a main amplifier stage and at least one peak transistor (98) forming a peak amplifier stage both transistors being supported on the support structure (104); a first input network (106) connecting the input terminal (102) to an input of the carrier transistor (92); a second input network (100, 114, 116) connecting the input terminal (102) to an input of the peak transistor (98); a first output network (94, 108, 110) connecting the output terminal (96) to an output of the carrier transistor (92); and a second output network (112) connecting the output terminal (96) to an output of the peak transistor (98), and wherein the input and output networks are artificial transmission lines comprising serial circuits and/or parallel circuits of at least one capacitance and/or at least one inductance.
REFERENCES:
patent: 6320462 (2001-11-01), Alley
patent: 6329877 (2001-12-01), Bowen et al.
patent: 6359513 (2002-03-01), Kuo et al.
patent: 6469581 (2002-10-01), Kobayashi
patent: 6731173 (2004-05-01), Thompson
patent: 6853245 (2005-02-01), Kim et al.
“Optimum design for linearity and efficiency of a Microwave Doherty Amplifier using a new load matching technique”. by Youngoo Yang and others, in Microwave Journal, Dec. 2001.
“Experimental Investigation on Efficiency and Linearity of Microwave Doherty Amplifier” by Youngoo Yang et al., pp. 1367-1370,IEEE MIT-S Digest.
Koninklijke Philips Electronics , N.V.
Lee John D.
Waxler Aaron
LandOfFree
High power Doherty amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High power Doherty amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power Doherty amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3595943