High power distributed feedback semiconductor laser excellent in

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 46, 372 49, H01S 308, H01S 319

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053532988

ABSTRACT:
A periodic structure is formed along the laser medium in the axial direction of a cavity. One of the end facet of the cavity has high reflectivity and the other end facet has low reflectivity. A phase discontinuous portion of the periodic structure is disposed in position deviated from the central portion of the cavity towards the high-reflectivity end facet. The phase discontinuous portion is formed of a phase shifting portion or a phase shifting area having the same effect as the phase discontinuity. The phase shift .DELTA..PHI. of the phase shifting portion or phase shifting area is set to exceed 3.pi./4 which is represented in terms of the phase of waveguiding light (which corresponds to 3.lambda./8 when the lasing wavelength is .lambda.). Thus, the performances of high power and linearity of light output can be simultaneously achieved.

REFERENCES:
patent: 5012484 (1991-04-01), Flynn et al.
patent: 5285468 (1994-02-01), Ackerman
G. Chen et al., "Distributed feedback lasers with distributed phase-shift structure", Applied Physics Letters, 60 (1992) May 25, No. 21, New York.
Shouichi Ogita et al., "Long-Cavity Multiple-Phase-Shift Distributed Feedback Laser Diode for Linewidth Narrowing," Journal of Lightwave Technology, Oct. 8, 1990, No. 10, New York.
Masashi Usami et al., "Asymmetric .lambda./4-Shifted InGaAsP/InP DFB Lasers," I.E.E.E. Journal of Quantum Electronics, QE-23, Jun. 1987, No. 6, N.Y.
".lambda./4-Shifted InGaAsP/InP DFB Lasers", Utaka et al., IEEE Journal of Quantum Electronics, vol. QE-22, No. 7, pp. 1042-1051, Jul. 1986.
"Stability in Single Longitudinal Mode Operation in GaInAsP/InP Phase-Adjusted DBF Lasers", Soda et al., IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, pp. 804-814, Jun. 1987.

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