Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Reexamination Certificate
2008-09-30
2008-09-30
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
C257S199000, C257S481000, C438S091000
Reexamination Certificate
active
11014458
ABSTRACT:
A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary electron discharge. The diode can operate at voltages 50 kV and higher while generating an electron beam with a uniform current density in the range from 1 A/cm2to >10 kA/cm2throughout the area of the cathode. It is capable of repetitively pulsed operation at a few Hz with pulse duration from a few nanoseconds to more than a microseconds, while the total number of pulses can be >107pulses. The diode generates minimal out-gassing or debris, i.e. with minimal ablation, providing a greater diode lifetime, and can operate in a high vacuum environment of 10−4Torr. The high power diode is useful in many applications requiring a high current electron beam. Exemplary applications include x-ray photography of large samples, polymerization processes, sterilization of biological and chemical agents, irradiation of food, and as a pump for lasers, e.g. excimer lasers such as krypton fluorine (KrF) lasers.
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Friedman Moshe
Hegeler Frank
Myers Matthew
Sethian John
Chambliss Alonzo
Karasek John J.
Legg L. George
The United States of America as represented by the Secretary of
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