Electrical transmission or interconnection systems – Switching systems
Reexamination Certificate
2011-07-12
2011-07-12
Fleming, Fritz M (Department: 2836)
Electrical transmission or interconnection systems
Switching systems
C307S115000, C307S147000, C307S149000
Reexamination Certificate
active
07977821
ABSTRACT:
A semiconductor power device, e.g., an Insulated Gate Bi-polar Transistor (IGBT) or a Metal-Oxide Field Effect Transistor (MOSFET) may be constructed in a reusable and repairable cost-effective sealed shell. The switch may be provided with direct-pressure-contact caps which may perform as electrical conductors for a semiconductor die of the switch and also as thermal heat-sink contacts for the device. The switch may be provided with internal self-powered gate driving control and PHM incorporated in sealed shell. Embodiments of the switch may be constructed with no external gating/PHM connection pin penetrations through the shell.
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Kojori Hassan Ali
Tegart Don A.
Fleming Fritz M
Honeywell International , Inc.
Jackson Esq. Miriam
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