Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2005-11-16
2009-06-30
Richards, N Drew (Department: 2895)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C438S584000, C438S754000, C438S800000, C361S502000, C361S508000, C257SE21008
Reexamination Certificate
active
07553341
ABSTRACT:
One embodiment of the present invention provides a process for fabricating an electrode for a capacitor using carbon nanotubes (CNTs), wherein the electrode comprises a metal substrate and a layer of active material (CNTs) coated onto the metal substrate. Specifically, the process starts by dispersing CNTs in a solvent to form a suspension. Next, the CNTs are charged in the suspension. The metal substrate is then immersed in the suspension. Next, the CNTs are deposited onto the metal substrate using electrophoretic deposition (EPD) to form the layer of active material on the metal substrate. In particular, the layer of active material is formed on the metal substrate without using a binder, which effectively reduces contact resistance between the active material and the metal substrate.
REFERENCES:
patent: 2003/0102222 (2003-06-01), Zhou et al.
patent: 2003/0180472 (2003-09-01), Zhou et al.
patent: 2004/0038556 (2004-02-01), French et al.
patent: 2006/0098389 (2006-05-01), Liu et al.
Publication entitled “Preparation and preliminary property study of carbon nanotubes films by electrophoretic deposition”, by Chunsheng Du et al., Materials Letters, Elsevier Science, Mar. 15, 2002, pp. 434-438.
Publication entitled “Preparation of carbon nanotubes composite sheet using electrophoretic deposition process”, by Chunsheng Du et al., Journal of Materials Science Letters 21, Kluwer Academic Publishers, 2002, pp. 565-568.
Du Chunsheng
Pan Ning
Lee Kyoung
Park Vaughan & Fleming LLP
Richards N Drew
The Regents of the University of California
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