Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-11-13
2000-03-07
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257205, 257565, H01L 310328
Patent
active
060343834
ABSTRACT:
A heterojunction bipolar transistor power cell consisting of a plurality of parallel connected sub-cells arranged in a chevron type of configuration wherein the sub-cells are staggered relative to one another so that the base feed for an input signal can have an equal electrical distance to all of the base contacts while keeping the orientation of the respective emitter fingers of the sub-cells in the same direction. By offsetting the sub-cells in a first or vertical direction, the number of sub-cells that can be arranged in a second or horizontal direction can be increased for the same horizontal distance as a conventional "in-line" design while overcoming the signal distribution limitation of a "fish-bone" design.
REFERENCES:
patent: 4939562 (1990-07-01), Alderstein
patent: 5616950 (1997-04-01), Liu
Patent Abstracts of Japan, vol. 96, No. 9, Sep. 30, 1996; JP 08 130222 A (NEC Corp.), May 21, 1996.
"HBTs For Microwave Power Applications", International Journal of High Speed Electronics and Systems, vol. 5, No. 3 (1994), Burhan Bayraktaroglu and J. Aiden Higgins, pp. 275-348, Dec. 1994.
Northrop Grumman Corporation
Prenty Mark V.
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