High power density and/or linearity transistors

Details High power density and/or linearity transistors High power density and/or linearity transistors

2007-01-09

2007-01-09

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S488000

Reexamination Certificate

active

11005107

ABSTRACT:
Field effect transistors having a power density of greater than 25 W/mm when operated at a frequency of at least 4 GHz are provided. The power density may be at least 30 W/mm when operated at 4 GHz. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Transistors with a power density of at least 30 W/mm when operated at 8 GHz are also provided. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Field effect transistors having a power density of greater than 20 W/mm when operated at a frequency of at least 10 GHz are also provided. Field effect transistors having a power density of at least 2.5 W/mm and a two tone linearity of at least −30 dBc of third order intermodulation distortion at a center frequency of at least 4 GHz and a power added efficiency (PAE) of at least 40% are also provided.

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