High power compact microwave amplifier

Details High power compact microwave amplifier High power compact microwave amplifier

1992-01-24

1993-05-04

Pascal, Robert J.

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330124R, 330289, 330 84, 330 65, H03F 368

Patent

active

052085546

ABSTRACT:
A Class A high power amplifier having an operating frequency in the range of less than substantially 2 GHz and suitable for aircraft use, is all solid state in that gallium arsenide field effect transistors are utilized. These are mounted in a large copper heat sink which is air cooled to provide for overall cooling by conduction and convection. By the use of microstrip matching circuits, the relatively low impedance of the gallium arsenide FET units is matched to the required higher system impedance. At the same time a 40% band-width is provided due to the superior matching.

REFERENCES:
patent: 4320349 (1982-03-01), Freers et al.
patent: 5066924 (1991-11-01), Wendt
patent: 5111157 (1992-05-01), Komiak
1-2 GHz High-Power Linear Transistor Amplifier, Presser et al RCA Review, vol. 33, Dec. 1972, pp. 737-751.

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