Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2008-05-09
2010-06-29
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S098000, C257S099000, C257S618000, C257SE33001, C362S084000, C438S022000, C438S029000, C438S069000
Reexamination Certificate
active
07745836
ABSTRACT:
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
REFERENCES:
patent: 5889294 (1999-03-01), Kashima et al.
patent: 6184542 (2001-02-01), Alphonse
patent: 2007/0223549 (2007-09-01), Livshits et al.
patent: 5182758 (1993-07-01), None
patent: 08-032169 (1996-02-01), None
patent: 09-232625 (1997-09-01), None
patent: 1020020089386 (2002-11-01), None
Teik-Kooi Ong et al., “High performance quantum well intermixed superluminescent diodes”, Meas. Sco. Technol. vol. 15(2004), pp. 1591-1595.
Yasumasa Kashima et al., Broad Spectrum InGaAsP Edge-Emitting Light-Emitting Diode Using Selective-Area Metal-Organic Vapor-Phase Epitaxy), IEEE Photonic Technology Letters, vol. 10, No. 9, Sep. 1998, pp. 1223-1225.
Jung Ho Song et al., “High-Power Broad-Band Superluminescent Diode Using Selective Area Growth at 1.5-μm Wavelength”, Pacific Ring 2007 Korea, Aug. 26-31, 2007, pp. 604-605.
Kim Gyung-Ock
Kim Ki-Soo
Leem Young-Ahn
Song Jung-Ho
Electronics and Telecommunications Research Institute
Pert Evan
Wilson Scott R
LandOfFree
High-power, broad-band, superluminescent diode and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-power, broad-band, superluminescent diode and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-power, broad-band, superluminescent diode and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4247477