High power bipolar transistor device

Details High power bipolar transistor device High power bipolar transistor device

1996-04-19

1998-02-17

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

330295, H03F 360, H03F 368

Patent

active

057195307

ABSTRACT:
A high power bipolar transistor includes bipolar transistors disposed on a substrate; a signal line including a pad for inputting a driving signal and a signal transmission line continuous with the pad commonly connecting base electrodes of the bipolar transistors; and a bypass line having a first end connected to the signal transmission line proximate to the pad and a second end connected to the signal transmission line remote from the pad. Approximately equal powers are supplied to the transistors connected to any position on the base feed line so that the operation of the respective transistors is uniform, improving output power and efficiency.

REFERENCES:
patent: 3564443 (1971-02-01), Nagata
patent: 3963993 (1976-06-01), Hoffman et al.
patent: 4835496 (1989-05-01), Schellenberg et al.
Kim et al., "Thermal Analysis And Power Characteristics Of A Power HBT For Locomotive Communication", IEICE Technical Report, 1995-07, pp. 95-101.

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