High power amplifier arrangements

Details High power amplifier arrangements High power amplifier arrangements

1983-09-06

1985-07-30

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

330277, 330 54, H03F 360

Patent

active

045324808

ABSTRACT:
A high power amplifier arrangement utilizes a configuration which is similar to that of a distributed amplifier in which the capacitances of a plurality of individual amplifying devices form part of a delay line which couples together the amplifying device, so as to sum the output power. The invention enables amplifying devices, such as vacuum tubes or field effect transistors which have significant electrode capacitances, to be used to amplify wide band high frequency signals. Each amplifying device is provided with an associated output impedance having a value which is matched to that of the output delay line on to which it fits. The output delay line consists of a number of stages separated by power combiners connected to different respective amplifying devices. This configuration can be more efficient than a conventional distributed amplifier, and its use is more acceptable in conjunction with loads, such as antennas whose actual input impedance can differ somewhat from a nominal design value.

REFERENCES:
patent: 4263559 (1981-04-01), Ho

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