High power AllnGaN based multi-chip light emitting diode

Details High power AllnGaN based multi-chip light emitting diode High power AllnGaN based multi-chip light emitting diode

2005-03-22

2005-03-22

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S099000, C438S127000

Reexamination Certificate

active

06869812

ABSTRACT:
A light emitting diode chip having a substantially transparent substrate and having an aspect ratio which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.

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