Patent
1989-10-11
1991-01-22
Mintel, William
357 30, 357 68, 357 17, 357 74, H01L 3112
Patent
active
049874616
ABSTRACT:
The invention provides a position sensor for detecting relative displacement between two elements, and includes an optical beam-producing source fixed to one of the elements, a semiconductor body fixed to a second element and arranged so that the beams impinge one surface of the semiconductor body, a planar sensor composed of a back-to-back diode photodetector positioned on the semiconductor surface, and readout means to monitor current generated by the sensor which gives a measure of the relative position between the element to which the semiconductor body is affixed.
REFERENCES:
Wang et al. "The Linearity and Sensitivity of Lateral Effect Position Sensitive Devices-An Improved Geometry", IEEE Transactions on Electron Devices, vol. 36, No. 11, Nov. 1989, pp. 2475-2480.
Levine et al., "Lateral Photoeffect in Thin Amorphous Superlattice Films of Si and Ti Grown on a Si Substrate", Appl. Phys. Lett., vol. 49, No. 22, Dec. 1, 1986, pp. 1537-1539.
Willens et al., "High Resolution Photovoltaic Position Sensing with Ti/Si Superlattices", Appl. Phys. Lett., vol. 49, No. 24, Dec. 1986, pp. 1647-1648.
Schmidt et al., "Position-Sensitive Photodetectors Made with Standard Silicon-Planar Technology", Sensors and Actuators, 4 (1983) 439-446.
Petersson et al., "Position Sensitive Light Detectors with High Linearity", IEEE Journal of Solid State Circuits, vol. SC-13, No. 3, Jun. 1978, pp. 392-399.
Wallmark, "A New Semiconductor Photocell Using Lateral Photoeffect", Proceedings of the IRE, Apr. 1956, pp. 474-483.
Niu et al., "Application of Lateral Photovoltaic Effect to the Measurement of the Physical Quantities of P-N Junctions-Sheet Resistivity and Junction Conductance of N.sub.2.sup.+ Implanted Si", Japanese Journal of Applied Physics, vol 15, No. 4, Apr. 1976, pp. 601-609.
Brueck Steven R. J.
McArdle Kristin
Mullins Bill W.
Soares Schubert
Mintel William
Sopp Albert
The University of New Mexico
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