Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-06-25
1993-08-10
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257234, 257236, 377 60, 377 62, 35821331, H01L 2978, H01L 2714, H01L 3100
Patent
active
052351971
ABSTRACT:
A wide dynamic range photodetector comprising a photosensitive region for generating signal electrons in response to being illuminated, a collection region for storing the signal electrons generated within the photosensitive region, a shift register for receiving and outputing the signal electrons from the collection region, and a transfer gate intermediate the photosensitive region and the collection region for alternately facilitating transfer of the signal electrons from the photosensitive region for storage in the collection region, and isolating the photosensitive region from the collection region while the signal electrons are being output via the shift register.
REFERENCES:
patent: 4473836 (1984-09-01), Chamberlain
patent: 4716466 (1987-12-01), Miida et al.
Gaffney et al., "Preventing Overload in Optical Scanners", IBM Technical Disclosure Bulletin, vol. 17, No. 8, May 1975.
An Improved Wide Dynamic Range Silicon Photodetector for Integration in Image Sensor Arrays; Doody, et al., Can. J. Phys. vol. 65, 1987.
A High Photosensitivity Wide Dynamic Range Silicon Linear Image Sensor Array; Doody, et al.
A High Speed, Wide Dynamic Range Linear Dynasensor CCD Detector Array for Acousto-Optic Applications; Washkurak, et al.
Chamberlain Savvas G.
Washkurak William D.
Dalsa Inc.
James Andrew J.
Ngo Ngan Van
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