Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1991-03-25
1993-03-23
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 59, H01L 2701, H01L 2714, H01L 4500, H01L 2978
Patent
active
051969114
ABSTRACT:
A thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has a accumulation gate on the bottom of the active semiconductor layer and a transparent depletion gate on the top of the active semiconductor layer. The gate length of the depletion gate is smaller than that of the accumulation gate.
REFERENCES:
patent: 4546009 (1985-10-01), Tiedje et al.
patent: 4601097 (1986-07-01), Shimbo
patent: 4738749 (1988-04-01), Maurice et al.
patent: 4778560 (1988-10-01), Takeda et al.
patent: 4788157 (1988-11-01), Nakamura
patent: 4797108 (1989-01-01), Crowther
patent: 4819038 (1989-04-01), Alt
patent: 4823180 (1989-04-01), Wieder et al.
patent: 4960719 (1990-10-01), Tanaka et al.
patent: 5017983 (1991-05-01), Wu
IEEE Transactions on Electron Devices, vol. 32 #11 pp. 49-53, Nov. 1985, by Wu et al.
Industrial Technology Research Institute
Prenty Mark V.
Saile George O.
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