High-permittivity thin film capacitor for a semiconductor integr

Details High-permittivity thin film capacitor for a semiconductor integr High-permittivity thin film capacitor for a semiconductor integr

1995-04-26

1999-03-16

Tsai, Jey

Fishing, trapping, and vermin destroying

437 52, 437919, H01L 2170, H01L 2700

Patent

active

058829466

ABSTRACT:
A semiconductor integrated circuit integrating a high-permittivity thin film capacitor of strontium titanate on the same semiconductor chip, the thin film capacitor consisting of a pair of electrodes and essentially crystalline strontium titanate film therebetween which has a thin surface layer where concentration of titanium is higher than that of the rest of the crystalline strontium titanate film. In one embodiment according to the present invention, a thin film capacitor was fabricated by depositing a 200 nm thick film of strontium titanate at a temperature of 300.degree. C. on a 10 nm thick amorphous titanium oxide film which eventually became the thin surface layer, and subsequent annealing of 250.degree. C. for 30 min in an oxidation atmosphere. A structure and processes realized a thin film capacitor having a dielectric constant of 100 and leakage current density of 4.times.10.sup.-7 A/cm.sup.2 without degrading characteristics of transistors already fabricated in the same semiconductor chip.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5142437 (1992-08-01), Kammerdiner et al.
patent: 5216572 (1993-06-01), Larson et al.
Technical Report of IEICE, ED-93-165, NW93-122, p. 55, abstract The Institute of Electronics Information and Communication Engineers, "Application of SrTio.sub.3 thin film capacitor of CaAs-ICs by using the low-temperature RF sputtering method", M. Nishitsuji et al., Jan. 1994, Japan.

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