Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-12-25
2007-12-25
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S535000, C438S957000, C438S003000
Reexamination Certificate
active
10546834
ABSTRACT:
A dielectric thin film8, comprising a first bismuth layer-structured compound layer8aexpressed by a composition formula of (Bi2O2)2+(Am−1BmO3m+1)2−or Bi2Am−1BmO3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layer8aand a lower portion electrode6, a second bismuth layer-structured compound layer8bincluding bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer8a.
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Miyamoto Yuki
Sakashita Yukio
Andujar Leonardo
TDK Corporation
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