High-permittivity dielectric capacitor for use in a semiconducto

Details High-permittivity dielectric capacitor for use in a semiconducto High-permittivity dielectric capacitor for use in a semiconducto

1992-12-21

1994-08-09

Lateef, Marvin M.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361322, 361328, H01G 410

Patent

active

053372077

ABSTRACT:
A high-permittivity dielectric capacitor (28) having a refractory-metal oxide layer (16) framing the first electrode (14) of the capacitor (28) and separating a high-permittivity dielectric layer (24) from an insulating layer (12) underlying the capacitor (28). The high-permittivity dielectric layer (16) makes contact with the first electrode (14) through an opening (18) in the refractory-metal oxide layer (16). The refractory-metal oxide layer (16) separates the high-permittivity dielectric layer (24) from the insulating layer (12) in all regions away from the opening (18) in the refractory-metal oxide layer (16). During fabrication of the capacitor (28), when the high-permittivity dielectric layer (24) is patterned, the refractory-metal oxide layer (16) provides an etch-stop.

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patent: 5023750 (1991-06-01), Hirayama
patent: 5046043 (1991-09-01), Miller et al.
patent: 5214300 (1993-05-01), Rohrer et al.
Parikh, N. R., et al., "Study Of Diffusion Barriers For PZT Deposited On Si For Non-Volatile Random-Access Memory Technology", Mat. Res. Soc. Proc. vol. 200, 1990 Materials Research Soc.
Chikarmane, V., et al., "The Effects Of Lead-Compendation And Thermal Processing On The Characteristics Of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films", Mat. Res. Soc. Proc., vol. 230, Spring Meeting 1991.

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