High performance voltage control diffusion resistor

Electrical resistors – With base extending along resistance element – Resistance element coated on base

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C338S325000

Reexamination Certificate

active

07071811

ABSTRACT:
The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains a first and second contact region. These contact regions extend downward from the surface of the substrate. A third contact is located within the diffusion region between the first and second contacts. This contact also extends downward from the surface of the substrate. These contacts are connected to metal layers. The first and second contacts form the two ends of the diffusion resistor. The third contact forms a Schottky diode such that application of a voltage to this contact forms a depletion region within the diffusion region. The depletion region changes in size depending on the voltage applied to the third contact to change the resistance of the depletion resistor.

REFERENCES:
patent: 3195071 (1965-07-01), Steinhoff
patent: 3254309 (1966-05-01), Miller
patent: 3320550 (1967-05-01), Gerlach
patent: 3566219 (1971-02-01), Nelson et al.
patent: 4219829 (1980-08-01), Dorda et al.
patent: 4321616 (1982-03-01), Bise
patent: 4426655 (1984-01-01), Bhatia et al.
patent: 4893158 (1990-01-01), Mihara et al.
patent: 5220194 (1993-06-01), Golio et al.
patent: 5260595 (1993-11-01), Hayama
patent: 5359256 (1994-10-01), Gray
patent: 5430323 (1995-07-01), Yamazaki et al.
patent: 5532175 (1996-07-01), Racanelli et al.
patent: 6087193 (2000-07-01), Gray
patent: 6455919 (2002-09-01), Brennan et al.
patent: 6521515 (2003-02-01), Kluth
patent: 2004/0075146 (2004-04-01), Yu
patent: 2004/0110324 (2004-06-01), King
patent: 2004/0164359 (2004-08-01), Iwata et al.
patent: 2005/0062586 (2005-03-01), Erickson et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High performance voltage control diffusion resistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High performance voltage control diffusion resistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High performance voltage control diffusion resistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3590330

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.