Fishing – trapping – and vermin destroying
Patent
1990-11-02
1992-07-07
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 33, 437 67, 437228, 148DIG10, 148DIG50, H01L 21265
Patent
active
051282712
ABSTRACT:
The present invention is a self-aligned, vertical bipolar transistor structure and a method of manufacturing such a structure. Reducing lateral dimensions with optical lithography is difficult and not much is gained without concurrently reducing alignment tolerances. For bipolar transistors the alignment tolerance is particularly important since it determines the parasitic capacitances and resistances and thus directly affects speed. In this application a new fully self-aligned transistor structure is presented that self-aligns the shallow trench, extrinsic base contact, and the emitter polysilicon to the intrinsic device area. The structure has no critical alignments. To insure extrinsic-intrinsic base linkup the intrinsic base is put in early in the process, conserved during the stack etch, and patterned underneath the sidewall during the silicon mesa etch. Unlike other mesa-like transistor structures, no out-diffusion of the extrinsic-base is required and therefore low-temperature processing can be used to maintain a narrow vertical profile.
REFERENCES:
patent: 3562607 (1971-02-01), Lersel
patent: 4333794 (1982-06-01), Beyer et al.
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 4731341 (1988-03-01), Kawamatsu
patent: 4783422 (1988-10-01), Kawamatsu
patent: 4800171 (1989-01-01), Iranmanesh et al.
patent: 4916083 (1990-04-01), Monkowski
patent: 4935375 (1990-06-01), Kasper et al.
patent: 4983532 (1991-01-01), Mitani et al.
patent: 4988639 (1991-01-01), Aomura
Bronner Gary B.
Harame David L.
Jost Mark E.
Schulz Ronald N.
Aker David
Hearn Brian E.
International Business Machines - Corporation
Picardat Kevin M.
Shay Bernard E.
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