Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Reexamination Certificate
2007-03-06
2007-03-06
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
C257S360000
Reexamination Certificate
active
11081993
ABSTRACT:
A semiconductor structure and a method for its manufacture are provided. In one example, the structure includes a well region doped with a first type dopant (e.g., a P-type or N-type dopant). A gate pedestal formed over the well region has two ends, one of which at least partially overlies the well region and is doped with the first type dopant. A dielectric layer is positioned between the gate pedestal and the well region. Source and drain regions formed on opposite sides of the gate pedestal within the well region are doped with a second type dopant opposite in type to the first type dopant.
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Chang Yi-Ling
Chen Hou-Yu
Chu You-Lin
Hu Chenming
Yang Fu-Liang
Haynes and Boone LLP
Pert Evan
Sandvik Benjamin P.
Taiwan Semiconductor Manufacturing Company, Inc.
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