High performance switch for switched inductor tuned RF circuit

Details High performance switch for switched inductor tuned RF circuit High performance switch for switched inductor tuned RF circuit

2006-07-04

2006-07-04

Pascal, Robert (Department: 2817)

Tuners

With switching means

Inductor only modified or substituted by switching

C334S047000, C334S060000, C334S071000

Reexamination Certificate

active

07071799

ABSTRACT:
A Radio Frequency (RF) circuit includes an active portion and a tuned portion. The active portion receives an RF signal and that operates upon the RF signal. The tuned portion couples to the active portion and includes a first inductor, a second inductor, and an NMOS transistor. The NMOS transistor has a gate, a drain, a source, and a body. The drain and source operably couple/decouple the second inductor to/from the first inductor. The drain and source are biased at respective operating voltages (greater than ground and less than a first voltage supply) by the active portion and the tuning portion. The body couples to a first voltage supply, via a control circuit or switch in some cases. Applying a second voltage supply (that is greater than the first voltage supply) to the gate turns ON the NMOS transistor.

REFERENCES:
patent: 4756024 (1988-07-01), Kupfer
patent: 6218895 (2001-04-01), De et al.

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