High performance sub-micron p-channel transistor with germanium

Details High performance sub-micron p-channel transistor with germanium High performance sub-micron p-channel transistor with germanium

1990-08-09

1993-11-30

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 24, 437 29, 437 45, 437 52, H01L 21336

Patent

active

052665100

ABSTRACT:
Implantation of germanium (45) into a PMOS buried channel to permits the enhancement implant profile (to 45) to be made more shallow. The shallow profile will reduce or eventually solve P-channel buried channel-induced short channel effects and enable further decrease in device length to deep submicron range.
Benefits include better short channel characteristics, i.e., higher punch through voltage BVDSS, less V.sub.T sensitivity to the drain voltage (defined as curl) and better subthreshold leakage characteristics.

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