Fishing – trapping – and vermin destroying
Patent
1989-03-06
1990-04-10
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437203, 437228, 437225, 357 34, 357 59, 156657, H01L 21265
Patent
active
049160834
ABSTRACT:
A novel vertical bipolar device endowed with a lithography-independent tightly controlled submicron-wide emitter. In one embodiment, the emitter is contacted by a self-aligned conductive sidewall linked up to a horizontal conductive link. The extrinsic base, embedded within the collector, is recessed below and laterally spaced from the emitter by an insulator layer formed on the emitter sidewall. Transistor action is confined to the small emitter within the intrinsic base, the latter being contiguous with the extrinsic base. The base is contacted by means of a conductive self-aligned silicide formed on the extrinsic base. In a second embodiment, the emitter is of a desired shape with a correspondingly shaped contacting sidewall and pad integral structure. In a third embodiment, the emitter is ring shaped. In all embodiments, electrical contact to emitter is established at a distance laterally away from the transistor action area.
A novel process of forming vertical (e.g. NPN) bipolar device in which starting with a substrate having an N type epitaxial collector region, a horizontal layer composed of oxide-polysilicon dual layer with a substantially vertical surface is formed. P type intrinsic base precursor is formed in a surface portion of the collector. A submicron-wide sidewall of N doped polysilicon is established on the sidewall. By RIE, a surface portion of the exposed intrinsic base is removed to recess the would-be extrinsic base. An oxide insulator is formed on the sidewall by thermal oxidation and RIE, while simultaneously driving dopant from the sidewall into the intrinsic base thereunder, thereby forming the emitter with self-aligned polysilicon sidewall contact and delineating the intrinsic base. Extrinsic base is implanted into the exposed recessed intrinsic base. A self-aligned silicide layer is formed on the extrinsic base as also on the horizontal polysilicon layer linked with the sidewall.
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IBM TDB, vol. 27, No. 2, Jul. 1984, pp. 108-109, "Self-Aligned Bipolar Transistor".
Monkowski Michael D.
Shepard Joseph F.
Brandt Jeffrey L.
Coca T. Rao
Hearn Brian E.
International Business Machines - Corporation
McAndrews Kevin
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