High performance sidewall emitter transistor

Details High performance sidewall emitter transistor High performance sidewall emitter transistor

1987-05-11

1989-07-11

James, Andrew J.

357 59, H01L 2972

Patent

active

048476706

ABSTRACT:
A novel vertical bipolar device endowed with a lithography-independent tightly controlled sub-micron-wide emitter. In one embodiment, the emitter is contacted by a self-aligned conductive sidewall linked up to a horizontal conductive link. The extrinsic base, embedded within the collector, is recessed below and laterally spaced from the emitter by an insulator layer formed on the emitter sidewall. Transistor action is confined to the small emitter within the intrinsic base, the latter being contiguous with the extrinsic base. The base is contacted by means of a conductive self-aligned silicide formed on the extrinsic base. In a second embodiment, the emitter is of a desired shape with a correspondingly shaped contacting sidewall and pad integral structure. In a third embodiment, the emitter is ring shaped. In all embodiments, electrical contact to emitter is established at a distance laterally away from the transistor action area.

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IBM Technical Disclosure Bulletin, vol. 27, No. 2, Jul. 1984, pp. 108-109, "Self-Aligned Bipolar Transistor".

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