High performance semiconductor devices fabricated with...

Details High performance semiconductor devices fabricated with... High performance semiconductor devices fabricated with...

2005-09-27

2005-09-27

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

C438S405000, C438S433000

Reexamination Certificate

active

06949443

ABSTRACT:
A high performance semiconductor device and the method for making same is disclosed with an improved drive current. The semiconductor device has source and drain regions built on an active region, a length of the device being different than a width thereof. One or more isolation regions are fabricated surrounding the active region, the isolation regions are then filled with an predetermined isolation material whose volume shrinkage exceeds 0.5% after an anneal process. A gate electrode is formed over the active region, and one or more dielectric spacers are made next to the gate electrode. Then, a contact etch stopper layer is put over the device, wherein the isolation regions, spacers and contact etch layer contribute to modulating a net strain imposed on the active region so as to improve the drive current.

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patent: 6429136 (2002-08-01), Miwa
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