High performance semiconductor devices and their manufacture

Details High performance semiconductor devices and their manufacture High performance semiconductor devices and their manufacture

1992-05-07

1993-09-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 70, 437 72, 437 73, H01L 21302, H01L 2176

Patent

active

052428540

ABSTRACT:
A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for submicron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.

REFERENCES:
patent: 4398992 (1983-08-01), Fang et al.
patent: 4609568 (1986-09-01), Koh et al.
patent: 4764480 (1988-08-01), Vora
patent: 4923563 (1990-05-01), Lee

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