High performance package using high dielectric constant material

Details High performance package using high dielectric constant material High performance package using high dielectric constant material

1993-09-24

1994-12-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257705, 257701, H01L 3902, H01L 2302

Patent

active

053714032

ABSTRACT:
A multi-layer package for semiconductor dies using two different types of dielectric materials improves the performance of a semiconductor package. The first material having a high dielectric constant is placed between the power and ground planes to form a decoupling capacitor and the second material having a low dielectric constant is used to contact the signal traces. Silicon carbide is preferred for the high dielectric constant material.

REFERENCES:
patent: 4945399 (1990-07-01), Brown et al.
patent: 5067005 (1991-11-01), Michii et al.
patent: 5089881 (1992-02-01), Panicker
patent: 5162264 (1992-11-01), Haug et al.
patent: 5177594 (1993-01-01), Chance et al.
"High-Frequency Bypass and Decoupling Design", Laudie Doubrava, Tektronic, Proceedings of Powercon5, Fifth National Solid-State Power Conversion Conference, May 1978, pp. iii-iv, H1-1-H1-11.
"Ceramics in Microelectronic Packaging", Rao R. Tummala, IBM Research Div., Amer. Ceramic Bulletin, vol. 67, No. 4, 752-758, Jan. 28, 1988.

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