High performance p-type thermoelectric materials and methods...

Details High performance p-type thermoelectric materials and methods... High performance p-type thermoelectric materials and methods...

2005-09-13

2005-09-13

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C148S400000, C420S576000, C423S086000, C423S622000

Reexamination Certificate

active

06942728

ABSTRACT:
The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBywherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

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