Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-02-01
2005-02-01
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S184000, C257S187000, C257S192000, C257S194000, C257S195000, C257S197000, C257S198000, C372S045013
Reexamination Certificate
active
06849866
ABSTRACT:
A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the same polarity which is opposite to the modulation doping of the PHEMT and they are separated by a lightly doped layer of specific thickness. The combination is separated from the PHEMT modulation doping by a specific thickness of undoped material. The charge sheets are thin and highly doped. The top charge sheet achieves low gate contact resistance and the bottom charge sheet defines the capacitance of the field-effect transistor (FET) with respect to the modulation doping layer of the PHEMT. The structure produces a pnp bipolar transistor, enhancement and depletion type FETs, a vertical cavity surface emitting laser, and a resonant cavity detector.
REFERENCES:
patent: 5010374 (1991-04-01), Cooke et al.
“Theoretical and experimental results for the inversion channel heterostructure field effect transistor” by Taylor et al., IEE Proceedings-G, vol. 140, No. 6. Dec. 1993, p. 392 to p. 400.
Gordon & Jacobson, PC
Loke Steven
The University of Connecticut
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