Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-09-13
2011-10-18
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE27009, C257SE21085, C327S382000, C438S933000
Reexamination Certificate
active
08039880
ABSTRACT:
A switching circuit. The novel switching circuit includes an active device and a first circuit for providing a reactive inductive load in shunt with the active device. In an illustrative embodiment, the first circuit is implemented using a transmission line coupled between an output of the active device and ground, in parallel with the device, to minimize the parasitic effects of the device drain to source capacitance. In a preferred embodiment, the active device includes a silicon-germanium NFET optimized for operation at high frequencies (e.g. up to 20 GHz). The optimization process includes coupling a compact, low-parasitic polysilicon resistor to a gate of the NFET to provide gate RF isolation, and designing the gate manifold, drain manifold, and drain to source spacing of the NFET for optimal high frequency operation.
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Tayrani Reza
Teshiba Mary A.
Christie Parker & Hale LLP
Kuo Wensing
Raytheon Company
Sandvik Benjamin
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