High performance microwave switching devices and circuits

Details High performance microwave switching devices and circuits High performance microwave switching devices and circuits

2005-09-13

2011-10-18

Sandvik, Benjamin (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257SE27009, C257SE21085, C327S382000, C438S933000

Reexamination Certificate

active

08039880

ABSTRACT:
A switching circuit. The novel switching circuit includes an active device and a first circuit for providing a reactive inductive load in shunt with the active device. In an illustrative embodiment, the first circuit is implemented using a transmission line coupled between an output of the active device and ground, in parallel with the device, to minimize the parasitic effects of the device drain to source capacitance. In a preferred embodiment, the active device includes a silicon-germanium NFET optimized for operation at high frequencies (e.g. up to 20 GHz). The optimization process includes coupling a compact, low-parasitic polysilicon resistor to a gate of the NFET to provide gate RF isolation, and designing the gate manifold, drain manifold, and drain to source spacing of the NFET for optimal high frequency operation.

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