High performance MESFET with multiple quantum wells

Details High performance MESFET with multiple quantum wells High performance MESFET with multiple quantum wells

1992-12-22

1994-06-21

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 20, 257 22, 257 24, 257192, 257285, H01L 2712, H01L 29161, H01L 4500

Patent

active

053230205

ABSTRACT:
A superheterojunction Field Effect Transistor (FET) with a multi-region channel on a Silicon (Si) substrate. The FET is a Metal Semiconductor FET (MESFET) or, alternatively, a Junction FET (JFET). The multi-region channel has: A first region of Si extending from the FET's source to a point under the FET's gate, beyond the gate's midpoint; a second region extending from the first region to the FET's drain, comprised of a superlattice of alternating Si and SiGe layers; and, a third region of Si extending under the first two regions from the source to the drain. The first region has a laterally graded dopant that creates an accelerating electric field. The superlattice structure increases electron mobility and transit velocity.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4673959 (1987-06-01), Shiraki et al.
patent: 4879256 (1989-11-01), Bean et al.
P. C. Chao, et al., "Experimental Comparisons in the Electrical Performance of Long and Ultrashort Gate Length GaAs MESFET's" IEEE Electron Device Letters, vol. EDL-3, No. 8, pp. 187-283, Aug. 1982.
P. C. Chao, et al., "Channel-Length Effects in Quarter-Micrometer Gate-Length GaAs MESFET's" IEEE Electron Device Letters, vol. EDL-4, No. 9, pp. 326-328, Sep. 1983.
A. F. Evason, et al., "Fabrication and Performance of GaAs MESFET's With Graded Channel Doping Using Focused Ion-Beam Implantation" IEEE Electron Device Letters, vol. 9, No. 6, pp. 281-283, Jun. 1988.

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