High performance MESFET transistor for VLSI implementation

Details High performance MESFET transistor for VLSI implementation High performance MESFET transistor for VLSI implementation

1982-07-26

1985-01-15

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307270, 307304, 357 15, 357 22, H03K 19017, H03K 19094, H03K 1920

Patent

active

044940165

ABSTRACT:
A gallium arsenide buffer amplifier for use in a very large scale integrated circuits is provided. The transistor device in the buffer amplifier has a uniform depth N+ source, gate and drain region and the N+ dopant concentration is made very high which effectively reduces the resistance of the transistor device and permits the area of the device to be reduced by more than one order of magnitude while maintaining high current and power levels.

REFERENCES:
patent: 4157556 (1979-06-01), Decker et al.
patent: 4173764 (1979-11-01), de Cremoux
patent: 4237473 (1980-12-01), Chiang
patent: 4300064 (1981-11-01), Eden
Bechtel et al., "Design and Performance of the GaAs FET," IEEE JSSC, vol. SC-5, No. 6, 12-1970, pp. 319-323.
Eden et al., "Application of GaAs Integrated Circuits and Charge-Coupled Devices (CCDs) for High Speed Signal Processing", Proc. Soc. Photo-Opt. Instrum. Eng. (USA), SPIE, vol. 214, 1979, pp. 39-47.
Liechti, "Microwave Field-Effect Transistors--1976", IEEE Trans. Microwave Theory & Tech., vol. MTT-24, No. 6, Jun. 1976, pp. 279-299.
Van Tuyl and Liechti, "High-Speed Integrated Logic with GaAs MESFET's", IEEE JSSC, vol. SC-9, No. 5, Oct. 1974, pp. 269-276.

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