Static information storage and retrieval – Read only systems
Reexamination Certificate
2007-09-25
2008-10-28
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read only systems
C365S104000, C365S189110, C365S204000
Reexamination Certificate
active
07443706
ABSTRACT:
In memory array of a memory circuit, a discharging module and an auxiliary module are disposed on each column line. While accessing an objective memory unit on a column line of the memory, the memory unit discharges the corresponding row line of the objective memory unit according to a discharging signal and a column selective signal. When the objective memory unit is enabled, the voltage level of the corresponding column line is changed, if the voltage level reaches a threshold voltage level, the auxiliary module enhances the increment of the voltage level of the column line.
REFERENCES:
patent: 6600672 (2003-07-01), Hayashi
patent: 6975528 (2005-12-01), Do
patent: 7042750 (2006-05-01), Choo et al.
patent: 7126866 (2006-10-01), Poplevine
Graham Kretelia
Ho Hoai V
Hsu Winston
VIA Technologies Inc.
LandOfFree
High-performance memory and related method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-performance memory and related method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-performance memory and related method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4013838