Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-01-04
2011-01-04
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE51022, C438S029000
Reexamination Certificate
active
07863632
ABSTRACT:
An organic light emitting device consists of a layered structure including a top multilayer stack, a bottom multilayer stack, a cavity layer between the top multilayer stack and the bottom multilayer stack, and an organic light emitting region within the cavity layer. The layered structure is constructed such that the product of phase factors ξ1and ξ2is. greater than 80% at the center of at least one emitting wavelength region and for a normal viewing angle, wherein where Ra−and Rb+are the reflectance of the top and bottom multilayer stacks respectively, φa−and φb+are the phase changes on reflection for the top and bottom multilayer stacks respectively, α1β1are respectively the real and imaginary parts of the phase thickness of the cavity layer, α2and β2are respectively the real and imaginary parts of the phase thickness of the light-emitting region at the operating wavelength of the device, x is the mean distance of light emitting region from the bottom multilayer stack, n and k are the refractive index and absorption coefficient of the cavity layer, θcavityis the emitting angle inside the cavity layer, and d is the physical thickness of said cavity layer. This condition improves the light output efficiency of the device.
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Dobrowolski Jerzy
Li Li
Poitras Daniel
(Marks & Clerk)
Lee Hsien-Ming
National Research Council of Canada
Parendo Kevin
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