High performance lateral PNP transistor with buried base contact

Details High performance lateral PNP transistor with buried base contact High performance lateral PNP transistor with buried base contact

1992-11-23

1993-12-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437 38, H01L 21265

Patent

active

052739139

ABSTRACT:
A high performance PNP lateral bipolar transistor is described, incorporating at least two trenches extending from the upper P.sup.- surface of a semiconductor substrate almost to a buried N.sup.+ layer. The floor of one trench is heavily N-doped to establish a connection between the buried N.sup.+ layer and an N.sup.- diffusion in the walls of the trench. When the trenches are backfilled with P.sup.+ polysilicon a lateral PNP is formed having a buried base contact.

REFERENCES:
patent: 4861729 (1989-08-01), Fuse et al.
patent: 5104816 (1992-04-01), Verret et al.
patent: 5173440 (1992-12-01), Isunashima et al.

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