High performance lateral bipolar transistor

Details High performance lateral bipolar transistor High performance lateral bipolar transistor

2007-02-06

2007-02-06

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

C257S423000, C257S511000, C257S525000, C257S526000, C257S556000, C257S558000, C257S559000, C257S560000, C257S561000, C257S562000, C257S575000

Reexamination Certificate

active

10427777

ABSTRACT:
A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias voltage thereto during operation of the transistor. The polarity of the bias voltage is such as to create an accumulation layer in the base under the gate. The accumulation layer provides a low-resistance path for the transistor base current, thus reducing the base resistance of the transistor.

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