High performance interconnect system for an integrated circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 47, 357 65, 357 67, 357 69, 357 72, H01L 2348, H01L 2328, H01L 2702

Patent

active

049337432

ABSTRACT:
A semiconductor integrated circuit device includes a high performance interconnect structure which comprises a plurality of interconnects, with each interconnect being structurally separated from the remaining interconnects except at electrical contact points. In one embodiment, each interconnect is substantially surrounded by a layer of dielectric material, there being gaps between each adjacent layer of surrounding dielectric material. Another embodiment, a layer of electrically conductive material is formed over the surrounding dielectric layer preferably filling in the gaps between adjacent layers of surrounding dielectric material. The layer of electrically conductive material acts as a ground plane and heat sink.

REFERENCES:
patent: 4045594 (1977-08-01), Maddocks
patent: 4097889 (1978-06-01), Kern et al.
patent: 4527184 (1985-07-01), Fischer
patent: 4556897 (1985-12-01), Torikahe et al.
patent: 4566940 (1986-01-01), Itsumin et al.
patent: 4601781 (1986-07-01), Mercier et al.
patent: 4601915 (1986-07-01), Allen et al.
patent: 4617193 (1986-10-01), Wu
patent: 4632725 (1986-12-01), Hartmann et al.
patent: 4659427 (1987-04-01), Barry et al.
patent: 4680610 (1987-07-01), Pammer
patent: 4689113 (1987-08-01), Balasubramanyam et al.
patent: 4694317 (1987-09-01), Higashi et al.
patent: 4761677 (1988-08-01), Sasaki
patent: 4783695 (1988-11-01), Eichelberger et al.
Article entitled "A GaAs MSI 8-bit Multiplexer and Demultiplexer" by McCormack et al., pp. 25-28, GaAs IC Symposium, publication number CH1764-0/82/0000-0025, 1982 IEEE.
Article entitled "A High Yield GaAs Array Technology and Applications", by Rode et al., pp. 178-181, GaAs IC Symposium, publication number CH1876-2/83/0000-0178, 1983 IEEE.
Article entitled "Effects of Capacitance at Crossover Wirings in Power GaAs M.E.S.F.E.T.S", by Aono et al., pp. 417-418, Electronics Letters, May 22nd, 1980, vol. 16, No. 11.
Article entitled "Glass Reinforced GaAs Beam Lead Schottky Diode with Airbridge for Millimetre Wavelengths", by Mills et al.; pp. 787-788, Electronics Letters, Sep. 13th, 1984, vol. 20, No. 19.
Article entitled "Air-Bridge Microbolometer for Far-Infrared Detection", by Neikirk et al.; pp. 153-155, American Institute of Physics, Appl. Phys. Lett 44(2), Jan. 15, 1984.
Article entitled "Effects of Interconnections on Submicron Chip Performance", by Carter et al.; pp. 63-68, VLSI Design, Jan. 1984.
Article entitled "Analysis of Crosstalk in Very High-Speed LSI/VLSI's Using a Coupled Multiconductor MIS Microstrip Line Model", by Seki et al., pp. 1948-1953, IEEE Transactions on Electron Devices, vol. Ed-31, No. 12, Dec. 1984.
Article entitled "Analysis of Interconnection Delay on Very High-Speed LSI/VLSI Chips Using an MIS Microstrip Line Model", by Hasegawa et al., pp. 1954-1960, IEEE Transaction on Electron Devices, vol. Ed-31, No. 12, Dec. 1984.
"Plasma Planarization", Solid State Transactions, vol. 24, No. 4, Apr. 1981, A. C. Adams.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High performance interconnect system for an integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High performance interconnect system for an integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High performance interconnect system for an integrated circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-621213

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.