High performance integrated vertical transistors and method...

Details High performance integrated vertical transistors and method... High performance integrated vertical transistors and method...

2007-05-15

2007-05-15

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

C438S340000

Reexamination Certificate

active

10905685

ABSTRACT:
A complementary bipolar transistor is fabricated using an available portion of a silicon germanium (SiGe) low temperature epitaxial layer as the raised base region for a vertical NPN transistor, and another portion of the same SiGe LTE layer as a vertical PNP collector layer. The complementary pair of transistors is vertically aligned and operates in a single direction.

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