High performance integrated bipolar and complementary field effe

Details High performance integrated bipolar and complementary field effe High performance integrated bipolar and complementary field effe

1976-01-26

1977-04-05

James, Andrew J.

357 34, 357 48, 357 49, 357 50, H01L 2702, H01L 2972, H01L 2704, H01L 2712

Patent

active

040165965

ABSTRACT:
A method for fabricating both bipolar as well as complementary MOS field effect transistors, i.e., BI-CMOS transistors in the same semiconductor substrate. The preferred embodiment of the method provides bipolar and CMOS transistors having breakdown voltages (BV.sub.ceo) in excess of 10 volts and CMOS devices having no latchup problems, with a minimum number of processing steps. The method also contemplates the formation of auxiliary devices such as resistors and Schottky Barrier diodes.

REFERENCES:
patent: 3858231 (1974-12-01), Magdo et al.
patent: 3886000 (1975-05-01), Bratter et al.
patent: 3954523 (1976-05-01), Magdo
Hybrid IGFET-Bipolar Transistor; by Malin et al. IBM Technical Disclosure Bulletin; vol. 12 No. 12 May 1970 pp. 2327-2328.
Electronics International, pp. 136 and 137, Aug. 31, 1970.
IBM Technical Disclosure Bulletin by Antipov, vol. 17, No. 1, June 1974, pp. 102 and 103.

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