Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-09-14
2010-02-09
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S021000, C257S414000, C257SE31022, C257SE31033, C257SE31054
Reexamination Certificate
active
07659536
ABSTRACT:
According to various embodiments, a photodetector including a first contact layer, a second contact layer, an active region, and a photonic crystal resonant cavity is disclosed. The photonic crystal resonant cavity can operate as a resonant structure to enhance the response of the photodetector at one or more wavelengths. In various embodiments, the photodetectors including a photonic crystal resonant cavity can, for example, demonstrate increased responsivity and quantum efficiency, lower the operating temperature, and/or be used to form a hyperspectral detector.
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Krishna Sanjay
Painter Oskar J.
Gumedzoe Peniel M
Lee Eugene
MH2 Technology Law Group
STC.UNM
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