Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1997-04-08
1998-06-02
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257565, 257557, 257593, H01L 29735
Patent
active
057604592
ABSTRACT:
A high performance, high voltage non-epi bipolar transistor including a substrate (12) with an n-type conductivity well (13) and an insulative layer (14) with first (15), second (17) and third (18) openings exposing the substrate in the well. A first p-type volume (19) surrounding the first and second openings (15, 17) beneath the insulative layer (14), and a second n-type volume (22) surrounding the third opening (18) beneath the insulative layer (14). A p-type intrinsic base (25) in the first opening (15) and in contact with the first volume (19). A p-type extrinsic base (30) in the second opening (17) and in contact with the first volume (19). An n-type collector (32) in the third opening (18) and in contact with the second volume (22), and an n-type emitter layer (27) in the first opening in overlying contact with the intrinsic base (25).
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Tam Gordon
Tam Pak
Bernstein Aaron B.
Chen George C.
Guay John
Jackson Jerome
Motorola Inc.
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