High-performance high-voltage device structures

Details High-performance high-voltage device structures High-performance high-voltage device structures

1995-06-02

1996-12-31

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257347, 257339, 257506, H01L 2701, H01L 2968, H01L 2978

Patent

active

055896952

ABSTRACT:
An improved high-voltage device structure (10, 50, or 60) is a hybrid silicon-based
on-silicon-based power device that has a low R.sub.ds(on) relative to devices formed using only a silicon substrate and includes control circuit (14, 14' or 14") formed on silicon substrate region (12 or 62). High-voltage circuit (16, 16' or 16") is formed in non-silicon substrate region (18). Connecting circuitry (34 and 66) connects control circuit (14, 14', and 14") with high-voltage circuit (16, 16' or 16") to form high-voltage device structure (10, 50 or 60) that has improved control circuit performance and improved high-voltage circuits performance over devices formed solely from a silicon substrate or solely from a non-silicon substrate.

REFERENCES:
patent: 4593458 (1986-06-01), Adler
patent: 4896194 (1990-01-01), Suzuki
patent: 5081062 (1992-01-01), Vasudev et al.
patent: 5286985 (1994-02-01), Taddiken
patent: 5338965 (1994-08-01), Malhi

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