High performance flash memory device capable of high density...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185300

Reexamination Certificate

active

07443732

ABSTRACT:
A method is provided for programming a nonvolatile memory array including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window containing a predetermined number of bits that are to be programmed in the array and determining which of the predetermined number of bits are to be programmed in the memory array. The predetermined number of bits are simultaneously programmed to corresponding memory cells in the array. A programming state of the predetermined number of bits in the array is simultaneously verified.

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2002 IEEE International Solid-State Circuits Conference, 23 pages.

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