High performance field effect transistor and method of manufactu

Details High performance field effect transistor and method of manufactu High performance field effect transistor and method of manufactu

1995-01-19

1995-12-26

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 45, 437157, H01L 21266

Patent

active

054787637

ABSTRACT:
A method is provided for fabricating a MOSFET transistor device with a gate formed over a lightly doped semiconductor substrate with a gate, and a source region and a drain region. V.sub.T1 ions are uniformly implanted into the surface of the substrate forming a V.sub.T region with substantially uniform doping in the upper portion of the substrate near the surface thereof. A gate oxide layer is formed on the substrate. A gate conductor is deposited over the gate oxide layer. A large angle implant is implanted into the region of the device over the source region. Then ions are implanted to form the source and drain regions which are self-aligned with the gate.

REFERENCES:
patent: 5079620 (1992-01-01), Shur
patent: 5292674 (1994-03-01), Okabe et al.
patent: 5355006 (1994-10-01), Iguchi

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