High performance extended wavelength imager and method of use

Details High performance extended wavelength imager and method of use High performance extended wavelength imager and method of use

1988-06-29

1990-05-15

Munson, Gene M.

357 30, 357 55, H01L 2978, H01L 2714, H01L 3100, H01L 2906

Patent

active

049262254

ABSTRACT:
A CCD imager array is formed at a face (30) of a semiconductor layer (12) and comprises a plurality of CCD cells (34) formed in rows and columns. A plurality of continuous buried gates (27) are each disposed between adjacent columns of the cells (34), and each buried gate (27) extends from the face (30) into the semiconductor layer (12). Each buried gate (27) includes a gate conductor (24) and a gate insulator (26). The buried gates (27) define for each cell (34) a charge collection region (66). A bias voltage source is operable to selectively apply a bias voltage (60) to the buried gate conductors (24), thereby creating a depletion region (64) that substantially includes the charge collection region (66). CCD clock gates (32) are operated independently of the buried gates (27) to read out the charge collected during an integration phase (58). The array of the invention is particularly useful in recording X-ray and near infrared electromagnetic radiation.

REFERENCES:
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patent: 4513313 (1985-04-01), Kinoshita et al.
patent: 4668971 (1987-05-01), Hynecek
patent: 4760273 (1988-07-01), Kimata
patent: 4779124 (1988-10-01), Hynecek
Kosonocky, "Charge-Coupled Devices-An Overview", 1974 Western Electronics Show and Convention Technical Papers, vol. 18, (9/74), pp. 2/1-2/20, reprinted in Melen et al., Eds., Charge-Coupled Devices: Technology and Applications, IEEE Press, N.Y., 1977, pp. 28-47.

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