High performance electrically alterable read only memory (EAROM)

Details High performance electrically alterable read only memory (EAROM) High performance electrically alterable read only memory (EAROM)

1979-03-12

1980-12-02

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 35, 357 46, 357 54, 307238, 365177, 365184, H01L 2702, H01L 2972, H01L 2934, H03K 500

Patent

active

042374723

ABSTRACT:
The invention is a memory device which includes a metal-nitride-oxide semiconductor (MNOS) insulated gate field effect transistor (IGFET) which is built in series with the emitter of a bipolar transistor to provide both bipolar collector-to-emitter breakdown voltage capability and bipolar radiation hardness while retaining MNOS memory performance.

REFERENCES:
patent: 3622812 (1971-11-01), Crawford
patent: 3877058 (1975-04-01), Cricchi

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