High performance electrically alterable read-only memory (EAROM)

Details High performance electrically alterable read-only memory (EAROM) High performance electrically alterable read-only memory (EAROM)

1979-03-09

1981-01-27

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 46, 357 54, 307238, 365177, 365184, H01L 2702, H01L 2934, H03K 500, G11C 1134

Patent

active

042478618

ABSTRACT:
The invention is a memory device which includes a metal-nitride-oxide semiconductor (MNOS) insulated gate field effect transistor (IGFET) which is built in series with the base of a bipolar transistor to provide both bipolar current handling capability and bipolar radiation hardness while retaining MNOS memory performance.

REFERENCES:
patent: 3609479 (1971-09-01), Lin et al.
patent: 3696276 (1972-10-01), Boland
patent: 3755721 (1973-08-01), Frohman-Bentchkowsky
patent: 3893085 (1975-07-01), Hansen
patent: 4004159 (1977-01-01), Rai et al.
patent: 4090254 (1978-05-01), Ho et al.
patent: 4173766 (1979-11-01), Hayes
Carballo et al. "Self-Contained Bipolar-FET Device", IBM Technical Disclosure Bulletin vol. 19 (4/77) pp. 4191-4192.
Gaensslen et al. "Hybrid IGFET-Bipolar Transistor", IBM TechnicalDisclosure Bulletin vol. 12 (5/70) pp. 2327-2328.

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