High performance dynamic sense amplifier with active loads

Details High performance dynamic sense amplifier with active loads High performance dynamic sense amplifier with active loads

1980-10-14

1983-01-25

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

365203, 365205, 307279, H03K 524, G11C 706

Patent

active

043705758

ABSTRACT:
A random access read/write MOS memory device consisting of an array of rows and columns of one-transistor memory cells employs a bistable sense amplifier circuit at the center of each column. The sense amplifier is of the dynamic type in that coupling transistors connect the column line halves to the cross-coupled driver transistors. The sources of the driver transistors are connected to ground through a sequentially timed, three step grounding arrangement employing two transistors, one having a dual channel implanted to provide two different threshold voltages. Active load devices connected to the column line halves provide pull-up of the voltage on the one-going column line half to a full Vdd level.

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